BSC010NE2LS

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SKU: BSC010NE2LS
Availability: InStock

Item No.: BSC010NE2LS

Part number: BSC010NE2LS
Package: TDSON8
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Description

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Specifications

Product Attribute	Attribute Value	Search Similar
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	64 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4.4 ns
Forward Transconductance - Min:	85 S
Height:	1.27 mm
Length:	5.9 mm
Product Type:	MOSFET
Rise Time:	6 ns
	5000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	6.7 ns
Width:	5.15 mm
Part # Aliases:	BSC1NE2LSXT SP000776124 BSC010NE2LSATMA1
Unit Weight:	0.003880 oz