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Home > Industry News

ASML's first public demonstration of High NA EUV lithography: the world's most advanced

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Update time : 2024-02-19 11:11:56
        Recently, lithography giant ASML publicly demonstrated the latest generation of High NA EUV lithography to the media for the first time at its headquarters in the Netherlands. It is reported that a set of High NA EUV lithography is the size of a double-decker bus, weighs 150 tons, is assembled larger than a truck, and needs to be divided into 250 individual crates for transportation. The installation is expected to take 250 engineers and six months to complete.
        According to the breaking news, the High NA EUV is priced at up to 350 million euros a piece, or about 2.7 billion yuan, and it will become a must-have weapon for the world's three largest wafer fabs to realize large-scale mass production of advanced processes up to 2 nm. In December 2023, Intel has taken the lead in picking up the world's first High NA EUV lithography, and TSMC and Samsung have ordered High NA EUVs. It is expected to arrive in 2026 at the earliest. Since High NA EUV lithography is twice as expensive as current EUV lithography, this also means that the cost of equipment will increase significantly. And next year's upcoming mass production of 2nm can still rely on the existing EUV lithography to complete, and the cost will not be a significant increase, which is TSMC, Samsung is not in a hurry to introduce the High NA EUV lithography key.
        Last December, ASML's official social media account released a photo of the scene. Figure can be seen, part of the lithography machine is placed in a protective box. The box was tied with a red ribbon and was being prepared for shipment from its headquarters in Eindhoven, the Netherlands. "The groundbreaking science and systems engineering that took a decade deserves a bow! We are pleased and proud to deliver our first high numerical aperture extreme ultraviolet lithography machine to Intel," said ASML.
        Publicly available information shows that NA numerical aperture is an important metric for the optical system of a lithography machine, which directly determines the actual resolution of the lithography, as well as the highest achievable process node. Generally speaking, after the metal pitch is reduced to less than 30nm, that is, the corresponding process node beyond 5nm, low numerical aperture photolithography resolution is not enough, can only use EUV double exposure or exposure molding (pattern shaping) technology to assist. This will not only greatly increase the cost, but also reduce the yield. Therefore, higher apertures become necessary.
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