Samsung Started Production of 3nm Process Chips
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Update time : 2022-07-02 11:09:17
Samsung Electronics announced it has begun initial chip production of its 3nm process node, which features a GAA transistor architecture. Samsung's first implementation of GAA technology multi-bridge C-channel FET (MBCFET) breaks through the performance limitations of FinFETs by reducing supply voltage levels to increase power efficiency while improving performance by increasing drive current capability, said the South Korean technology company.
Samsung said it is beginning to use nanosheet transistors with semiconductor chips for high-performance, low-power computing applications, with plans to expand to mobile processors.
"Samsung is rapidly evolving as we continue to demonstrate leadership in applying next-generation technologies to manufacturing, such as the foundry industry's first high K metal gate, FinFET, and EUV. We seek to continue this leadership with MBCFET through the world's first 3nm process," said Siyoung Choi, president and head of foundry business at Samsung Electronics. "We will continue to innovate aggressively in the development of competitive technologies and establish processes that will help accelerate the achievement of technology maturity."
Samsung said its proprietary technology uses nanosheets with wider channels to achieve higher performance and greater energy efficiency than GAA technology, which uses nanowires with narrower channels. Using 3nm GAA technology, Samsung will be able to adjust the channel width of the nanosheets to optimize power consumption and performance to meet a variety of customer needs.
In addition, the design flexibility of GAA is very beneficial for design technology co-optimization (DTCO), which helps to enhance power, performance, and area (PPA) benefits. Compared to the 5nm process, the first generation 3nm process can reduce power consumption by up to 45%, improve performance by 23%, and reduce area by 16% compared to 5nm, while the second generation 3nm process is designed to reduce power consumption by up to 50%, improve performance by 30%, and reduce area by 35%, Samsung said.
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