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Home > Industry News

Qorvo® Introduces D2PAK Packaged SiC FET to Enhance 750V Electric Vehicle Designs

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Update time : 2024-02-18 09:53:37
        Qorvo® (NASDAQ: QRVO), a leading global provider of connectivity and power solutions, today announced an automotive-compliant Silicon Carbide (SiC) Field Effect Transistor (FET) product; achieving the industry's superior 9mΩ on-resistance RDS(on) in the compact D2PAK-7L package. The 750V SiC FET is the first in Qorvo's new family of pin-compatible SiC FETs with on-resistance values up to 60mΩ, making it ideal for electric vehicle (EV) type applications such as on-board chargers, DC/DC converters and positive temperature coefficient (PTC) heater modules.
With a typical on-resistance value of 9mΩ at 25°C, the UJ4SC075009B7S reduces conduction losses and maximizes efficiency in high-voltage, multi-kilowatt automotive applications. Its small surface-mount package enables automated assembly processes and reduces manufacturing costs for customers. The new 750V family complements Qorvo's existing 1200V and 1700V D2PAK packaged automotive SiC FETs, creating a complete portfolio to address 400V and 800V battery architecture electric vehicle applications.
        "The introduction of this new family of SiC FETs underscores our commitment to providing electric vehicle powertrain designers with advanced, efficient solutions to help them meet their unique vehicle dynamics challenges," said Ramanan Natarajan, director of marketing for Qorvo's power supply product line. 
        These fourth-generation SiC FETs utilize Qorvo's unique common-source, common-gate structure circuit configuration, which combines SiC JFETs and silicon-based MOSFETs in a combined package to create a device that offers the efficiency benefits of wide-bandgap switching technology with the simplicity of gate drive for silicon-based MOSFETs. The efficiency of SiC FETs depends on conduction losses; Qorvo's common-source, common-gate structure/JFET approach results in lower conduction losses due to the industry's superior low on-resistance and body diode reverse voltage drop.
 
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