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Samsung's third-generation 4nm chips to be mass-produced in the first half of this year, sources say

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Update time : 2023-03-15 11:13:17
        According to BusinessKorea, Samsung will start mass production of third-generation 4nm chips in the first half of this year, which will stabilize yield issues in the early stages of the process, as well as improve performance, and power consumption and make area improvements.
 
 
        Samsung Electronics 12 announced in the "Samsung Electronics Business Report", Samsung will start mass production of 4nm process-based 2.3 generation chips in the first half of this year. This is the first time Samsung Electronics mentioned the specific mass production time of the 4nm successor version. Compared to the earlier version of the 4nm chip, SF4E, the second and third-generation products show better performance and also bring lower power consumption and smaller area. 
        However, Samsung Electronics also encountered a series of challenges in managing chip yields after the commercialization of the SF4E chip, and eventually gave up its major customer Qualcomm to TSMC due to poor energy performance coupled with capacity constraints. Industry insiders estimate that Samsung Electronics' current 4nm process yield can reach 60%, while TSMC's yield for the same type can reach 70~80%. Experts believe that Samsung Electronics yields are improving rapidly and that mass production of subsequent products is accelerating. 
        As Samsung Electronics continues to make breakthroughs in advanced processes to ensure capacity with improved performance, it is expected to be able to compete further with TSMC in the mass production of processes above the 5nm level. The most advanced semiconductor process today is the 3nm level, but both TSMC and Samsung's main products are still 4nm and 5nm. 
        According to market research firm Counterpoint Research, 4nm and 5nm processes accounted for the highest share of sales in the third quarter of last year, at 22%, ahead of 16% for 6nm and 7nm processes and 11% for 16, 14 and 12nm processes.


 
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