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Home > Industry News

STMicroelectronics and Soitec collaborate on silicon carbide substrate manufacturing technology

Views : 62
Update time : 2022-12-08 10:22:10
        STMicroelectronics, one of the world's leading semiconductor companies, and Soitec Semiconductor, a global leader in the design and production of innovative semiconductor materials, have officially announced a new phase in their collaboration in the field of silicon carbide substrates. To support the growth of the device and module manufacturing business, with volume production expected in the medium term.
        The automotive and industrial markets are accelerating the electrification of systems and products, and the upgrade to 200mm silicon carbide wafers will bring significant benefits to our automotive and industrial customers," said Marco Monti, President of ST's Automotive and Discrete Products Division. As volumes expand, it is important to increase economies of scale. As a vertically integrated semiconductor manufacturer (IDM), we can maximise our unique technological advantages throughout the manufacturing chain, covering everything from high-quality substrates to large-scale front-end and back-end production. Improving production yields and quality is exactly what our technology partnership with Soitec is all about."
        Bernard Aspar, Soitec's Chief Operating Officer, said, "Electric vehicles are disrupting the automotive industry. By combining our patented SmartCut™ process with silicon carbide semiconductors, SmartSiC™ technology will accelerate the adoption of silicon carbide in the electric vehicle market. the combination of Soitec's SmartSiC™ optimized substrates and ST's industry-leading silicon carbide technology, expertise, will drive significant change in automotive chip manufacturing and set new industry standards."
        Silicon carbide is a disruptive compound semiconductor material with superior properties to traditional silicon, targeted at critical, high-growth power applications in areas such as electric vehicles and industrial processes, offering superior performance and energy efficiency. It enables more efficient power conversion, lighter and more compact designs, and overall system design cost savings, contributing to the success of automotive and industrial systems.
        The move from 150mm wafers to 200mm wafers almost doubles the available area for manufacturing integrated circuits and provides 1.8 to 1.9 times more active chips per wafer, leading to significant capacity gains.
SmartSiC™ is Soitec's patented technology. Using Soitec's patented SmartCut™ technology, thin layers of high quality silicon carbide donor wafers can be stripped and bonded to low resistivity polysilicon operating wafers, helping to improve device performance and production yields. In addition, high quality silicon carbide donor wafers can be reused multiple times, thereby significantly reducing the total energy consumption of production.
        Soitec Semiconductor is a global leader in the design and production of innovative semiconductor materials, serving the electronics and energy markets with its unique technology and expertise in the semiconductor sector. Soitec is fully committed to sustainability and in 2021 has incorporated sustainability into its corporate mission statement: "We provide the ground for technological innovation that empowers intelligent and energy-efficient electronic devices for a sustainable life.
 
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