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Transphorm Introduces Top-Heat-Sinking TOLT Package FETs for Superior Thermal and Electrical Performance in Computing, Artificial Intelligence, Energy

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Update time : 2024-01-04 09:43:43
        Transphorm, Inc., a leading global supplier of gallium nitride (GaN) power semiconductors that represent the future of next-generation power systems, has announced the launch of a new SuperGaN® FET in a TOLT package, the TP65H070G4RS transistor, which has an on-resistance of 72 milliohms and is the industry's first surface-mount, top-shelf thermal dissipation FET in a JEDEC-compliant (MO-332) TOLT package. The new TP65H070G4RS transistor has an on-resistance of 72 milliohms and is the industry's first top-sinking, surface-mounted GaN device in a JEDEC standard (MO-332) TOLT package.
 
 
        The TOLT package provides customers with a more flexible thermal management solution for systems that are not suitable for traditional bottom-sink surface-mount devices. The TOLT package not only offers thermal performance comparable to the widely used, thermally stable TO-247 jack package, but also offers the added benefit of efficient manufacturing processes through SMD-based printed circuit board assembly (PCBA).
        The TP65H070G4RS utilizes Transphorm's powerful, high-performance 650 V normally closed d-mode GaN platform, which offers lower gate charge, output capacitance, crossover loss, reverse recovery charge, and dynamic resistance, resulting in better efficiencies than Silicon, Silicon Carbide and other GaN products. The benefits of the SuperGaN platform, combined with better heat dissipation and system assembly flexibility in the TOLT package, provide a high-performance, high-reliability GaN solution for power system customers seeking to introduce power systems with higher power densities and efficiencies at a lower overall power system cost.
        Transphorm is working with a number of high power GaN partners around the world, including leading customers in server and storage power, a global leader in energy/microinverters, a manufacturer of innovative off-grid power solutions, and a leader in satellite communications.
        Surface mount devices such as TOLL and TOLT offer a number of advantages including reduced internal inductance and simpler on-board mounting during fabrication," said Philip Zuk, senior vice president of business development and marketing at Transphorm, "TOLT offers more flexible overall thermal management by utilizing topside heat sinking for jack-like thermal performance. TOLT provides more flexible overall thermal management by utilizing topside heat sinking, providing jack-like thermal performance. These devices are typically used in medium to high power system applications, with key market segments including high performance computing (servers, telecom, AI power), renewable energy and industrial, and electric vehicles. Several of these market applications are currently utilizing Transphorm's GaN technology. We are very pleased to be able to help our customers realize additional system-level benefits with our TOLT SuperGaN solutions."
        The release of this new TOLT FET, following the recent introduction of three new TOLT FETs, further enriches Transphorm's product line and underscores the market commitment of Transphorm's SuperGaN platform to harness the full power of gallium in a variety of package formats to support customer applications.

 
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