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Home > Industry News

Infineon Introduces CoolSiC™ MOSFET G2, a New Generation of Silicon Carbide Technology, Driving Decarbonized High Performance Systems

Views : 35
Update time : 2024-03-22 17:45:03
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) opens a new chapter in power systems and energy conversion with the introduction of a new generation of silicon carbide (SiC) MOSFET trench gate technology. Compared to the previous generation, Infineon's new CoolSiC™ MOSFET 650 V and 1200 V Generation 2 technology improves key MOSFET performance metrics such as energy and charge storage by up to 20% while ensuring quality and reliability, which not only improves the overall energy efficiency, but also contributes to the decarbonization process.
 
 
CoolSiC™ MOSFET Generation 2 (G2) technology continues to capitalize on the performance advantages of silicon carbide, increasing efficiency during power conversion by reducing energy loss. This provides significant advantages to customers in power semiconductor applications such as photovoltaics, energy storage, DC electric vehicle charging, motor drives and industrial power supplies. Compared to previous generations, EV DC fast charging stations with CoolSiC™ G2 reduce power losses by up to 10 percent and achieve higher charging power without compromising on form factor. Traction inverters based on CoolSiC™ G2 devices can further increase the range of electric vehicles. In the field of renewable energies, solar inverters with CoolSiC™ G2 can realize a smaller size while maintaining a high power output, thus reducing the cost per watt. 
Dr. Peter Wawer, President of the Zero Carbon Industrial Power Business Unit at Infineon Technologies, said: "The megatrend is towards new and efficient ways of generating, transmitting and consuming energy. With the CoolSiC™ MOSFET G2, Infineon is taking silicon carbide to a new level of performance. This new generation of silicon carbide technology enables manufacturers to design lower-cost, more compact, more reliable and more efficient systems faster, achieving energy savings while reducing CO2 emissions per watt in the field. This exemplifies Infineon's persistence in continuing to drive innovation for decarbonization and digitalization in the industrial, consumer, and automotive sectors."
Infineon's pioneering CoolSiC™ MOSFET trench gate technology drives the development of high-performance CoolSiC™ G2 solutions, enabling more optimized design choices with higher efficiency and reliability compared to current SiC MOSFET technology. Combined with the award-winning .XT package technology, Infineon further enhances the potential of CoolSiC™ G2-based designs with higher thermal conductivity, better package control and improved performance. 
With all key power technologies in silicon, silicon carbide and gallium nitride (GaN), Infineon offers design flexibility and leading-edge application know-how to meet the expectations and demands of modern design. In the drive towards decarbonization, innovative semiconductors based on wide-bandwidth (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) have become key to the efficient use of energy.
 
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