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Infineon Introduces EiceDRIVER™ 2ED2410-EM, High Voltage Side Gate Driver

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Update time : 2022-09-29 10:17:52
        Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the EiceDRIVER™ 2ED2410-EM, an intelligent high-side MOSFET gate driver with integrated line protection, for 12V/24V automotive applications. The gate driver is the ideal partner for Infineon's 40/60V OptiMOS™ MOSFETs.
 
 
        The gate driver has two output channels and is suitable for two different MOSFET configurations: common source with pre-charge path or common drain back-to-back configuration. The enhanced switching capability of the driver makes it easy to increase the number of MOSFETs to control larger load currents. It quickly disconnects in microseconds even when the current reaches hundreds of amps, whereas conventional fuses need to wait several milliseconds to disconnect. In addition, the device is able to operate normally at voltages as low as 3V during the time between short circuit and disconnection of the faulty load. 
        With three analog measurement interfaces and four integrated comparators providing protection, the EiceDRIVER 2ED2410-EM provides a flexible and rich solution to meet a variety of functional requirements, including adjustable I-t line protection, overcurrent protection, over/under voltage protection, and more. It can measure bi-directional current and monitor the drain source voltage to determine conditions such as an open load at the output.
        The adjustable line protection feature helps to select the smallest possible wire cross section for the corresponding load. In the past, wire diameters had to have up to 30% more margin than actually required, taking into account the tolerances and aging effects of conventional fuses. The device has a very low quiescent current loss of zero point a few microamps, which minimizes the automatic discharge of the battery when the vehicle is parked.
        
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