Infineon's new CoolSiC™ MOSFET 750V G1 product family drives automotive and industrial solutions
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Update time : 2024-03-19 17:55:19
Infineon Technologies Inc. (FSE code: IFX/OTCQX code: IFNNY) recently launched 750V G1 split CoolSiC ™ MOSFET to meet the growing demand for higher energy efficiency and power density in industrial and automotive power applications.Infineon's groundbreaking CoolSiC ™ MOSFET trench gate technology drives high-performance CoolSiC ™ The development of G2 solutions has enabled for more optimized design choices, with higher efficiency and reliability compared to current SiC MOSFET technology. Combining award-winning achievements XT packaging technology, Infineon further enhances CoolSiC based technology with higher thermal conductivity, better packaging control, and better performance ™ The design potential of G2. Compared to the previous generation of products, Infineon's all-new CoolSiC ™ The MOSFET 650 V and 1200 V Generation 2 technologies have increased the main performance indicators of MOSFETs (such as energy and charge storage) by 20% while ensuring quality and reliability. This not only improves overall energy efficiency, but also further promotes the low-carbon process. This product series includes industrial grade and automotive grade SiC MOSFETs, optimized for totem pole PFC, T-type, LLC/CLLC, dual active bridge (DAB), HERIC, buck/boost, and phase shifted full bridge (PSFB) topologies. These MOSFETs are suitable for typical industrial applications (including electric vehicle charging, industrial drives, solar and energy storage systems, solid-state circuit breakers, UPS systems, servers/data centers, telecommunications, etc.) and the automotive industry (including in vehicle chargers (OBCs), DC to DC converters, etc.).
The CoolSiC MOSFET 750 V G1 technology is characterized by excellent RDS (on) x Qfr and excellent RDS (on) x Qoss optimal value (FOM), with ultra-high efficiency in both hard switching and soft switching topologies. Its unique high threshold voltage (VGS (th), typical value of 4.3 V) combined with low QGD/QGS ratio has high robustness against parasitic conduction and achieves unipolar gate drive, not only improving power density but also reducing system costs. All semiconductor devices adopt Infineon's autonomous chip connection technology, which endows the chip with excellent thermal resistance in the same bare chip size. The highly reliable gate oxide layer design, combined with Infineon's certification standards, ensures long-term stable performance.
The new CoolSiC MOSFET 750 V G1 product series has an RDS (on) of 8 to 140 m Ω at 25 ° C, which can meet a wide range of needs. It has lower conduction and switching losses in design, greatly improving the overall system efficiency. Innovative packaging greatly reduces thermal resistance, helps improve heat dissipation, and optimizes the power loop inductance within the circuit, achieving high power density while reducing system costs. It is worth mentioning that this product series adopts advanced QDPAK top cooling packaging.
Dr. Peter Wawer, President of the Zero Carbon Industrial Power Division at Infineon Technologies, stated, "The current trend is to adopt efficient new ways to generate, transmit, and consume energy. Infineon relies on CoolSiC ™ MOSFET G2 has elevated the performance of silicon carbide to a new level. The new generation of silicon carbide technology enables manufacturers to design systems with lower costs, more compact structures, more reliable performance, and higher efficiency more quickly, reducing on-site carbon dioxide emissions per watt while achieving energy conservation. This fully reflects Infineon's persistent efforts to promote low-carbon and digital innovation in the industrial, consumer, and automotive sectors
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