STMicroelectronics introduces new silicon carbide power modules to boost electric vehicle performance and range
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Update time : 2022-12-26 13:48:50
STMicroelectronics has introduced five high-power silicon carbide (SiC) modules for electric vehicles that will improve performance and range. Hyundai has chosen to use ST's new power modules for its E-GMP electric vehicle platform.
Five new SiC-MOSFET-based power modules offer automakers more flexibility and cover a range of power ratings to support operating voltages commonly used in electric vehicle traction applications. These power modules are available in ST's ACEPACK DRIVE package optimized for traction applications and feature sintering technology for reliable performance and ruggedness, so manufacturers can easily integrate them into electric vehicle drives. The main power semiconductor inside is ST's third generation (Gen3) STPOWER SiC MOSFET, combining industry-leading quality factor (RDS(ON) x die area), very low switching energy and superb synchronous rectification performance.
ST silicon carbide solutions enable major automotive OEMs to set the pace of electrification in the development of next-generation electric vehicles," said Marco Monti, president of ST's Automotive and Discrete Devices Business Unit. Our third-generation SiC technology ensures maximum power density and energy efficiency for superior vehicle performance, range and recharge time."
Hyundai Motor Company, the market leader in electric vehicles, has selected ST's ACEPACK DRIVE SiC-MOSFET Gen3-based power modules for its current electric vehicle platform (E-GMP). And these modules will be used in the Kia EV6.
ST's SiC-MOSFET-based power modules are the right choice for our traction inverters, enabling longer range," said Mr. Sang-Cheol Shin, Hyundai Motor Group's inverter engineering design team. This collaboration is an important step towards more sustainable electric vehicles."
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