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Home > Industry News

X-FAB Announces Acquisition of M-MOS

Views : 58
Update time : 2024-01-11 11:16:18
        Recently, SiC wafer foundry leader X-FAB released an announcement that the company plans to invest 22.5 million euros (equivalent to about 176 million yuan) to acquire all the shares of M-MOS Semiconductor Hong Kong Limited (hereinafter referred to as M-MOS).
 
 
        According to the introduction, M-MOS is a focus on the development of MOSFET technology fabless (Fabless) company. M-MOS sold to the industrial, consumer and automotive markets, MOSFET wafers are mainly produced by X-FAB. 2022, M-MOS revenue of $ 32 million (equivalent to about 229 million yuan). In addition, according to M-MOS official website information, it also has gallium nitride on silicon (GaN-on-Si) power discrete device technology research and development capabilities.
        Notably, M-MOS is a wholly-owned subsidiary of Xtrion NV, meaning that Xtrion NV is the sole seller of the company's equity. As Xtrion NV has been a major investor in X-FAB until November 2023, the two are considered related parties under the relevant laws, and the transaction is therefore subject to review by the relevant authorities for conflict of interest. 
        As previously disclosed by X-FAB, in November 2023, Xtrion sold all of its X-FAB shares to its indirect shareholders, Elex NV and Sensinnovat BV, which are the investments of the Duchâtelet family and the De Winter-Chombar family, respectively Elex NV and Sensinnovat BV are the investment and holding companies of the Duchâtelet and De Winter-Chombar families respectively. Currently, Elex NV and Sensinnovat BV hold 25% and 24.2% of the shares of X-FAB, respectively.
        Rudi De Winter, CEO of X-FAB Group, said that X-FAB started its discrete device business more than 20 years ago in Germany, and subsequently produced trench MOSFETs for M-MOS at its facility in Malaysia.X-FAB believes that M-MOS' process and product design knowledge as well as its market knowledge will help to accelerate the growth of X-FAB's discrete device business. 
        According to X-FAB's website, X-FAB is the first pure-play foundry to offer comprehensive processing technology for the wide-bandwidth material SiC/GaN, processing GaN-on-Si in its modern 8-inch wafer fab in Dresden, Germany, and SiC in its 6-inch wafer fab in LaBourque, Texas, U.S.A. X-FAB is the first pure-play foundry to offer comprehensive processing technology for the wide-bandwidth material SiC/GaN. 
        X-FAB produces a wide range of SiC products, including SiC SBDs (Schottky Barrier Diodes), Merged PiN Schottky (MPS) diodes, JBS (Junction Barrier Schottky) diodes, MOSFETs, and JFETs, while the company produces 8-inch GaN-on-Si, which allows for multi-route GaN products.
 
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